共 50 条
- [41] Calculating Homogeneity Regions in Indium Antimonide and Arsenide. Neorganiceskie materialy, 1981, 17 (05): : 778 - 782
- [42] INVESTIGATION OF THE NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM ARSENIDE. 1977, 11 (08): : 858 - 860
- [43] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
- [47] Structural Inhomogeneities of Anodic Oxide Films on Gallium Arsenide. Neorganiceskie materialy, 1981, 17 (05): : 769 - 774
- [48] BROADBAND MONOLITHIC INTEGRATED POWER AMPLIFIERS IN GALLIUM ARSENIDE. Microwave journal, 1982, 25 (11): : 87 - 94
- [49] MASS SPECTROMETRIC STUDY OF NONSTOICHIOMETRIC VAPORIZATION OF CADMIUM ARSENIDE JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (03): : 606 - &
- [50] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252