共 50 条
- [22] AC CONDUCTION IN AMORPHOUS GALLIUM ARSENIDE. Journal of Non-Crystalline Solids, 1986, 87 (1 & 2): : 30 - 42
- [23] DISORDER AND OPTICAL PROPERTIES IN GALLIUM ARSENIDE. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 992 - 994
- [25] MODEL OF THE RESIDUAL PHOTOCONDUCTIVITY: GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (10): : 1309 - 1310
- [26] INFLUENCE OF DOPING AND PRESSURE ON CHANGES IN THE DEGREE OF LOCALIZATION OF THE d ELECTRONS IN SOME ALLOYS BASED ON CHROMIUM ARSENIDE. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1984, 26 (07): : 1260 - 1264
- [28] PROCEDURES FOR FORMING OHMIC CONTACTS TO GALLIUM ARSENIDE. Harry Diamond Laboratories (Technical Memorandum) HDL-TM, 1983,
- [30] CARRIER-DENSITY DEPENDENCE OF EFFECTIVE MASS OF ELECTRONS IN INDIUM ARSENIDE AT 78 DEGREES K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 894 - +