AC CONDUCTION IN AMORPHOUS GALLIUM ARSENIDE.

被引：0
|
作者：
Mahavadi, K.K. [1 ]
Milne, W.I. [1 ]
机构：
[1] Univ of Oregon, Eugene, OR, USA, Univ of Oregon, Eugene, OR, USA
来源：
Journal of Non-Crystalline Solids | 1986年 / 87卷 / 1 & 2期
关键词：
SEMICONDUCTING FILMS - Electric Conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The AC conduction in sputtered a-GaAs(:H) films has been studied in the frequency range of 10** minus **2 to 10** plus **4 Hz over 100 to 373 K. At low temperatures, the AC conductivity has a frequency dependence of the form omega **s at and above room temperature, it is activated with an activation energy (0. 46 plus or minus 0. 01) eV. The predicted omega **2 dependence of the conductivity at low frequencies has not been observed. The phonon frequencies, determined from the normalized loss curves are of the order of 10**1**3 Hz in the hydrogenated films and one to two orders of magnitude smaller in the unhydrogenated films.
引用
收藏
页码：30 / 42
相关论文
共 50 条
  • [1] AC CONDUCTION IN AMORPHOUS GALLIUM-ARSENIDE
    MAHAVADI, KK
    MILNE, WI
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 87 (1-2) : 30 - 42
  • [2] ELECTROABSORPTION OF GALLIUM ARSENIDE.
    Bobylev, B.A.
    Kravchenko, A.F.
    Terekhov, A.S.
    1635, (06):
  • [3] FASTER AND SMALLER WITH GALLIUM ARSENIDE.
    Grad, Paul
    Journal of the Institution of Engineers, Australia, 1988, 60 (17): : 16 - 18
  • [4] SURFACE WAVES IN GALLIUM ARSENIDE.
    Levin, M.D.
    Lobanova, G.A.
    Pashchin, N.S.
    Yakovkin, I.B.
    Soviet Physics, Acoustics (English translation of Akusticheskii Zhurnal), 1975, 21 (01): : 41 - 43
  • [5] RADIOELECTRIC EFFECT IN GALLIUM ARSENIDE.
    Kemarskii, V.A.
    Lyubchenko, V.E.
    1600, (09):
  • [6] DECAY OF PHOTOLUMINESCENCE EMITTED BY GALLIUM ARSENIDE.
    Knab, O.D.
    Petrov, A.I.
    Frolov, V.D.
    Shveikin, V.I.
    Shmerkin, I.A.
    1972, 5 (08): : 1429 - 1430
  • [7] DISORDER AND OPTICAL PROPERTIES IN GALLIUM ARSENIDE.
    Paparoditis, C.
    Rideau, A.
    Monnom, G.
    Gaucherel, Ph.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 992 - 994
  • [8] NATURE OF NEGATIVE MAGNETORESISTANCE OF GALLIUM ARSENIDE.
    Gasanli, Sh.M.
    Emel'yanenko, O.V.
    Lagunova, T.S.
    Nasledov, D.N.
    1973, 6 (10): : 1714 - 1717
  • [9] MODEL OF THE RESIDUAL PHOTOCONDUCTIVITY: GALLIUM ARSENIDE.
    Dobrego, V.P.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (10): : 1309 - 1310
  • [10] DC CONDUCTION IN AMORPHOUS GALLIUM-ARSENIDE FILMS
    SAKS, NS
    BARBE, DF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 583 - 583
12345