共 50 条
- [33] ELECTROABSORPTION OF NICKEL-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 298 - 300
- [34] EFFECTIVE MASSES OF ELECTRONS IN INDIUM ARSENIDE AND INDIUM ANTIMONIDE PHYSICAL REVIEW, 1957, 105 (02): : 460 - 464
- [36] KINETICS OF DECAY OF THE ″IMPURITY″ LUMINESCENCE OF GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1981, 15 (07): : 772 - 775
- [37] INVESTIGATION OF THE IMPURITY INTERACTION MECHANISM IN INDIUM ARSENIDE. 1978, 12 (10): : 1139 - 1142
- [38] MAGNETORESISTANCE AND HALL EFFECT IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1984, 18 (11): : 1239 - 1242
- [39] DETERMINATION OF IONIZATION ENERGY OF CADMIUM IN INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 884 - &