NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE.

被引：0

作者：

Voronkov, V.V. ^{[1
]}

Voronkova, G.I. ^{[1
]}

Kalinushkin, V.P. ^{[1
]}

Murin, D.I. ^{[1
]}

Omel'yanovskii, E.M. ^{[1
]}

Pervova, L.Ya. ^{[1
]}

Prokhorov, A.M. ^{[1
]}

Raikhshtein, V.I. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of General Physics, Moscow, USSR, Acad of Sciences of the USSR, Inst of General Physics, Moscow, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 08期

关键词：

LASERS; CARBON DIOXIDE - Testing - SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTOR DEVICES - Materials;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The method of low-angle scattering of CO//2 laser radiation was applied to semiinsulating GaAs and for the first time it revealed impurity inhomogeneities with a characteristic (radius) of approximately 6-20 mu and a carrier density approximately 10**1**6 cm** minus **3. The influence of temperature on the light-scattering diagrams and the effects of heat treatment on the characteristic parameters of these microinclusions were investigated.

引用

页码：854 / 856

共 50 条

[1] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM-ARSENIDE
VORONKOV, VV
VORONKOVA, GI
KALINUSHKIN, VP
MURIN, DI
OMELYANOVSKII, EM
PERVOVA, LY
PROKHOROV, AM
RAIKHSHTEIN, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 854 - 856
[2] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTER IN SEMIINSULATING GALLIUM ARSENIDE.
Brodovoi, V.A.
Mirets, L.Z.
Peka, G.P.
Soviet physics. Semiconductors, 1980, 14 (07): : 788 - 790
[3] MAGNETORESISTANCE AND HALL EFFECT IN SEMIINSULATING GALLIUM ARSENIDE.
Bumai, Yu.A.
Vas'kov, O.S.
Vil'kotskii, V.A.
Domanevskii, D.S.
Soviet physics. Semiconductors, 1984, 18 (11): : 1239 - 1242
[4] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE.
Fistul', V.I.
Pervova, L.Ya.
Omel'yanovskii, E.M.
Rashevskaya, E.P.
Solov'ev, N.N.
Pelevin, O.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
[5] METHOD OF MEASURING THE INHOMOGENEITIES OF THE ELECTROPHYSICAL PROPERTIES OF SEMIINSULATING GALLIUM ARSENIDE.
Yurova, E.S.
Kartavykh, A.V.
Industrial Laboratory (USSR) (English translation of Zavodskaya Laboratoriya), 1987, 53 (05): : 402 - 406
[6] MECHANISM OF THE COMPENSATION OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE.
Ganapol'skii, E.M.
Omel'yanovskii, E.M.
Pervova, L.Ya.
Fistul', V.I.
1600, (07):
[7] KINETICS OF DECAY OF THE ″IMPURITY″ LUMINESCENCE OF GALLIUM ARSENIDE.
Glinchuk, K.D.
Lukat, K.
Rodionov, V.E.
Soviet physics. Semiconductors, 1981, 15 (07): : 772 - 775
[8] ELECTROABSORPTION OF GALLIUM ARSENIDE.
Bobylev, B.A.
Kravchenko, A.F.
Terekhov, A.S.
1635, (06):
[9] INTERNAL QUANTUM EFFICIENCY OF IMPURITY PHOTOCONDUCTIVITY IN SEMIINSULATING GALLIUM-ARSENIDE
VAKULENKO, OV
SKRYSHEVSKII, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 106 - 107
[10] FASTER AND SMALLER WITH GALLIUM ARSENIDE.
Grad, Paul
Journal of the Institution of Engineers, Australia, 1988, 60 (17): : 16 - 18

← 1 2 3 4 5 →