共 50 条
- [1] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
- [2] MAGNETORESISTANCE AND HALL EFFECT IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1984, 18 (11): : 1239 - 1242
- [3] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTERS IN SEMI-INSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 788 - 790
- [4] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
- [5] METHOD OF MEASURING THE INHOMOGENEITIES OF THE ELECTROPHYSICAL PROPERTIES OF SEMIINSULATING GALLIUM ARSENIDE. Industrial Laboratory (USSR) (English translation of Zavodskaya Laboratoriya), 1987, 53 (05): : 402 - 406
- [7] KINETICS OF DECAY OF THE ″IMPURITY″ LUMINESCENCE OF GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1981, 15 (07): : 772 - 775
- [8] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
- [9] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 854 - 856