共 50 条
- [43] BROADBAND MONOLITHIC INTEGRATED POWER AMPLIFIERS IN GALLIUM ARSENIDE. Microwave journal, 1982, 25 (11): : 87 - 94
- [44] Structural Inhomogeneities of Anodic Oxide Films on Gallium Arsenide. Neorganiceskie materialy, 1981, 17 (05): : 769 - 774
- [45] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
- [47] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529
- [48] INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (02): : 279 - 282
- [49] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1982, 16 (08): : 936 - 937