LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE.

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作者：
Kachurin, G.A.
Nidaev, E.V.
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来源：
Soviet physics. Semiconductors | 1980年 / 14卷 / 03期
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摘要：
SEMICONDUCTING SILICON
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页码：251 / 252
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