LASER ANNEALING OF POINT-DEFECTS IN SILICON AND GALLIUM-ARSENIDE

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作者：

KACHURIN, GA

NIDAEV, EV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 03期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：251 / 252

页数：2

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