LASER ANNEALING OF POINT-DEFECTS IN SILICON AND GALLIUM-ARSENIDE

被引：0
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作者：
KACHURIN, GA
NIDAEV, EV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 03期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：251 / 252
页数：2
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