POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES. INDIUM ARSENIDE.

被引:0
|
作者
Romanov, O.V.
Popov, A.V.
机构
来源
| 1600年 / 20期
关键词
ELECTROLYTES;
D O I
暂无
中图分类号
学科分类号
摘要
The electrochemical behavior and the electrophysical surface parameters of a narrow-band single-crystal InAs electrode have been studied over a wide range of pH and electrode potentials via the complex field effect in aqueous electrolytes (CFEE). For the first time it has been possible in an electrochemical system to demonstrate the effect of special features in the population (degeneracy of the electron-hole gas in the conduction and valence band) and distribution (nonparabolic shape of the conduction band, possible manifestation of a local maximum in the density of states in the valence band) of electronic states of the allowed bands in the semiconductor. It was found that the structural and chemical anisotropy along the left bracket 111 right bracket direction in InAs shows up in a variety of electrochemical and electrophysical characteristics of the InAs-electrolyte system.
引用
收藏
相关论文
共 50 条
  • [1] POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES - INDIUM ARSENIDE
    ROMANOV, OV
    POPOV, AV
    SOVIET ELECTROCHEMISTRY, 1984, 20 (07): : 854 - 861
  • [2] POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES - INDIUM-ANTIMONIDE
    ROMANOV, OV
    SOKOLOV, MA
    SOVIET ELECTROCHEMISTRY, 1984, 20 (10): : 1243 - 1250
  • [3] PICOSECOND PHOTOCONDUCTIVITY OF INDIUM ARSENIDE.
    Adomaitis, E.
    Dobrovol'skis, Z.
    Krotkus, A.
    Soviet physics. Semiconductors, 1984, 18 (08): : 889 - 891
  • [4] INVESTIGATION OF THE IMPURITY INTERACTION MECHANISM IN INDIUM ARSENIDE.
    Semikolenova, N.A.
    Nesmelova, I.M.
    Khabarov, E.N.
    1978, 12 (10): : 1139 - 1142
  • [5] POTENTIODYNAMIC MEASUREMENTS ON A SEMICONDUCTOR ELECTRODE - INDIUM-PHOSPHIDE (INP)
    ROMANOV, OV
    POPOV, AV
    SOKOLOV, MA
    SOVIET ELECTROCHEMISTRY, 1984, 20 (08): : 1002 - 1008
  • [6] Calculating Homogeneity Regions in Indium Antimonide and Arsenide.
    Zaitov, F.A.
    Polyakov, A.Ya.
    Gorshkova, O.V.
    Neorganiceskie materialy, 1981, 17 (05): : 778 - 782
  • [7] POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES - ELEMENTAL SEMICONDUCTORS (GE, SI)
    ROMANOV, OV
    SOKOLOV, MA
    SOVIET ELECTROCHEMISTRY, 1980, 16 (07): : 797 - 804
  • [8] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM ARSENIDE AND INDIUM GALLIUM ARSENIDE.
    Arora, Vijay K.
    Mui, David S.L.
    Morkoc, Hadis
    IEEE Transactions on Electron Devices, 1987, ED-34 (06) : 1231 - 1238
  • [9] POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES - TERNARY CADMIUM MERCURY TELLURIUM COMPOUND
    ROMANOV, OV
    BOZHEVOLNOV, VB
    GRILIKHES, MS
    SOKOLOV, MA
    SOVIET ELECTROCHEMISTRY, 1985, 21 (04): : 452 - 457
  • [10] Measurements of glass electrodes.
    Pfeil, E
    ANGEWANDTE CHEMIE, 1936, 49 : 0057 - 0059