THE GROWTH OF GAAS ON SI BY MBE

被引：45
|
作者：
KOCH, SM [1 ]
ROSNER, SJ [1 ]
HULL, R [1 ]
YOFFE, GW [1 ]
HARRIS, JS [1 ]
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90392-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：205 / 213
页数：9
相关论文
共 50 条
  • [21] SINGULAR INSTABILITIES ON LPE GAAS, CVD SI, AND MBE INP GROWTH SURFACES
    RODE, DL
    WAGNER, WR
    SCHUMAKER, NE
    APPLIED PHYSICS LETTERS, 1977, 30 (02) : 75 - 78
  • [22] GAAS GROWTH ON SI(111) USING A 2-CHAMBER MBE SYSTEM
    FUJITA, K
    SHINODA, A
    YAMAMOTO, T
    TAKEBE, T
    WATANABE, T
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 565 - 570
  • [23] MBE GROWTH OF GAAS AND III-V QUANTUM-WELLS ON SI
    WOODBRIDGE, K
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 1 - 6
  • [24] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE
    AKIYAMA, M
    NISHI, S
    KAMINISHI, K
    SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30
  • [25] MBE GROWTH AND PROPERTIES OF FE3(AL,SI) ON GAAS(100)
    HONG, M
    CHEN, HS
    KWO, J
    KORTAN, AR
    MANNAERTS, JP
    WEIR, BE
    FELDMAN, LC
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 984 - 988
  • [26] SITE-ADDRESSED DOPING OF AMPHOTERIC SI IMPURITIES IN MBE GROWTH OF GAAS
    KAMIJOH, T
    SUGIYAMA, N
    KATAYAMA, Y
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 165 - 170
  • [27] Initial stages of GaAs on Si (001) by MBE
    Kawanami, H., 1600, (55):
  • [28] Characteristics of Si and Be δ-codoped GaAs grown by MBE
    Yonekubo, S
    Ichiryu, D
    Horikoshi, Y
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 88 - 92
  • [29] EPITAXY OF GAAS ON PATTERNED SI SUBSTRATES BY MBE
    CHARASSE, MN
    BARTENLIAN, B
    HIRTZ, JP
    PEUGNET, A
    CHAZELAS, J
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 7 - 12
  • [30] ELEMENTARY PROCESSES IN THE MBE GROWTH OF GAAS
    JOYCE, BA
    SHITARA, T
    YOSHINAGA, A
    VVEDENSKY, DD
    NEAVE, JH
    ZHANG, J
    APPLIED SURFACE SCIENCE, 1992, 60-1 : 200 - 209
12345