EPITAXY OF GAAS ON PATTERNED SI SUBSTRATES BY MBE

被引：0
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作者：
CHARASSE, MN
BARTENLIAN, B
HIRTZ, JP
PEUGNET, A
CHAZELAS, J
机构：
来源：
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON | 1989年 / 160卷
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：7 / 12
页数：6
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