THE GROWTH OF GAAS ON SI BY MBE

被引：45
|
作者：
KOCH, SM [1 ]
ROSNER, SJ [1 ]
HULL, R [1 ]
YOFFE, GW [1 ]
HARRIS, JS [1 ]
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90392-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：205 / 213
页数：9
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