THE GROWTH OF GAAS ON SI BY MBE

被引：45
|
作者：
KOCH, SM [1 ]
ROSNER, SJ [1 ]
HULL, R [1 ]
YOFFE, GW [1 ]
HARRIS, JS [1 ]
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90392-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：205 / 213
页数：9
相关论文
共 50 条
  • [31] Improvements of MCT MBE Growth on GaAs
    J. Ziegler
    J. Wenisch
    R. Breiter
    D. Eich
    H. Figgemeier
    P. Fries
    H. Lutz
    R. Wollrab
    Journal of Electronic Materials, 2014, 43 : 2935 - 2940
  • [32] Growth dynamics of InGaAs/GaAs by MBE
    Georgia Inst of Technology, Atlanta, United States
    J Cryst Growth, pt 1 (203-210):
  • [33] POST-GROWTH DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN BY MBE
    BEALL, RB
    CLEGG, JB
    CASTAGNE, J
    HARRIS, JJ
    MURRAY, R
    NEWMAN, RC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1171 - 1175
  • [34] COMPARATIVE-STUDY OF AMORPHOUS AND CRYSTALLINE BUFFER LAYERS IN MBE GROWTH OF GAAS ON SI
    UEN, WY
    SAKAWA, S
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 122 - 127
  • [35] Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate
    Paek, J. H.
    Nishiwaki, T.
    Yamaguchi, M.
    Sawaki, N.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1436 - 1440
  • [36] Growth of cubic GaN on GaAs(001) and Si(001) by plasma-assisted MBE
    Ploog, KH
    Yang, B
    Yang, H
    Trampert, A
    Brandt, O
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 271 - 276
  • [37] Improvements of MCT MBE Growth on GaAs
    Ziegler, J.
    Wenisch, J.
    Breiter, R.
    Eich, D.
    Figgemeier, H.
    Fries, P.
    Lutz, H.
    Wollrab, R.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (08) : 2935 - 2940
  • [38] Growth dynamics of InGaAs/GaAs by MBE
    Fournier, F
    Metzger, RA
    Doolittle, A
    Brown, AS
    CarterComan, C
    Jokerst, NM
    BicknellTassius, R
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 203 - 210
  • [39] Comparative study of MBE growth on Si(001) and GaAs(001) by Monte Carlo simulation
    Kawamura, Takaaki
    Ishii, Akira
    Shinku/Journal of the Vacuum Society of Japan, 1999, 42 (03): : 147 - 150
  • [40] Initial stages of GaAs MBE growth on Si(111)(√3 × √3)-Ga surfaces
    Maehashi, Kenzo, 1600, (29):
12345