Initial stages of GaAs on Si (001) by MBE

被引:0
|
作者
机构
来源
Kawanami, H. | 1600年 / 55期
关键词
712 Electronic and Thermionic Materials;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] INITIAL-STAGES OF GAAS MBE GROWTH ON POROUS SI
    MAEHASHI, K
    HASEGAWA, S
    SATO, M
    NAKASHIMA, H
    ITO, T
    HIRAKI, A
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A119 - A122
  • [2] INITIAL-STAGES OF MOVPE GROWTH OF GAAS ON SI(001) AND SI(111)
    ALBERTS, V
    NEETHLING, JH
    VERMAAK, JS
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1992, 88 (03) : 157 - 161
  • [3] EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES OF GAAS(001) MBE
    ANTIPOV, VG
    NIKISHIN, SA
    SVETLOV, VN
    SINYAVSKII, DV
    SMOLSKII, OV
    SPIRENKOV, VA
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (08): : 41 - 46
  • [4] Comparison of MBE Growth of InSb on Si (001) and GaAs (001)
    Tran, T. Lien
    Hatami, Fariba
    Maselink, W. Ted
    Kunets, Vas P.
    Salamo, G. J.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (12) : 1799 - 1805
  • [5] Comparison of MBE Growth of InSb on Si (001) and GaAs (001)
    T. Lien Tran
    Fariba Hatami
    W. Ted Masselink
    Vas P. Kunets
    G.J. Salamo
    Journal of Electronic Materials, 2008, 37 : 1799 - 1805
  • [7] EFFECTS OF SIASBEAS INTERFACE STRUCTURE ON THE INITIAL-STAGES OF GAAS MBE GROWTH ON SI(111)
    MAEHASHI, K
    HASEGAWA, S
    NAKASHIMA, H
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 98 - 101
  • [8] Growth and Si-doping of GaN on GaAs(001) by MBE
    Huang, Q
    Chen, H
    Li, ZQ
    Liu, HF
    Zhou, JM
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 306 - 310
  • [9] EFFECT OF SI DOPING ON SURFACE ORDERING OF MBE GAAS(001)
    PASHLEY, MD
    HABERERN, KW
    ULTRAMICROSCOPY, 1992, 42 : 1281 - 1287
  • [10] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS
    HOUZAY, F
    GUILLE, C
    MOISON, JM
    HENOC, P
    BARTHE, F
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 67 - 72