Nanowire quantum effects in trigate SOI mosfets

被引：2

作者：

Colinge, Jean-Pierre ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES | 2007年

关键词：

silicon-on-insulator; SOI MOSFET; multiple-gate MOSFET;

D O I：

10.1007/978-1-4020-6380-0_9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes low-dimensional nanowire quantum effects that occur in small trigate SOI MOSFETs. 2D numerical simulation is used to calculate the electron concentration profile as a function of gate voltage in devices with different cross sections. The smaller the section, the higher tile threshold voltage. A dynamic increase of threshold voltage with electron concentration is observed. Inter-subband scattering causes oscillations of the transconductance when measured as a function of the gate voltage. These oscillations are visible at low temperature (< 30K) in samples with a 45 x 82nm cross section and at room temperature in devices with a 11 nm x 48nm cross section.

引用

页码：129 / 142

页数：14

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