Nanowire quantum effects in trigate SOI mosfets

被引：2
|
作者：
Colinge, Jean-Pierre [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES | 2007年
关键词：
silicon-on-insulator; SOI MOSFET; multiple-gate MOSFET;
D O I：
10.1007/978-1-4020-6380-0_9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes low-dimensional nanowire quantum effects that occur in small trigate SOI MOSFETs. 2D numerical simulation is used to calculate the electron concentration profile as a function of gate voltage in devices with different cross sections. The smaller the section, the higher tile threshold voltage. A dynamic increase of threshold voltage with electron concentration is observed. Inter-subband scattering causes oscillations of the transconductance when measured as a function of the gate voltage. These oscillations are visible at low temperature (< 30K) in samples with a 45 x 82nm cross section and at room temperature in devices with a 11 nm x 48nm cross section.
引用
收藏
页码：129 / 142
页数：14
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