Quantum modelling of particle-particle interactions in SOI MOSFETs

A method is presented for treating particle-particle interactions that can be used within Monte Carlo simulations that include quantum potential corrections to the classical potential profile. We use the effective potential method to treat the quantum confinement effects, along with a new molecular dynamics implementation to treat short-range particle interactions. We demonstrate the need for including electron-electron interactions to properly examine energy relaxation of hot electrons in the drain. We also demonstrate the influence of discrete dopants on the uniformity of current flow in ultra-thin SOI nMOSFETs.