A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs

被引：0
|
作者：
Lee, Wei [1 ]
Su, Pin [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：25 / 26
页数：2
相关论文
共 50 条
  • [31] 3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs
    Munteanu, D.
    Autran, J. L.
    Ferlet-Cavrois, V.
    Paillet, P.
    Baggio, J.
    Castellani, K.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) : 994 - 1001
  • [32] Substrate bias effect linked to parasitic series resistance in multiple-gate SOI MOSFETs
    Rudenko, Tamara
    Kilchytska, Valeria
    Collaert, Nadine
    Jurczak, Malgorzata
    Nazarov, Alexey
    Flandre, Denis
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (09) : 834 - 836
  • [33] Simulation of the nanoelectronic single-electron transistor and the nanoelectronic C-NOT single-electron gate
    Zardalidis, George T.
    2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 1303 - 1306
  • [34] Comparison of the scaling characteristics of nanoscale SOI N-channel multiple-gate MOSFETs
    Aniket A. Breed
    Kenneth P. Roenker
    Analog Integrated Circuits and Signal Processing, 2008, 56 : 135 - 141
  • [35] Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs
    Penaud, J.
    Fruleux, F.
    Dubois, E.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 395 - 399
  • [36] A Unified Quasi-3D Subthreshold Behavior Model for Multiple-Gate MOSFETs
    Liou, Juin J.
    Gao, Hong-Wun
    Wang, Yeong-Her
    Chiang, Te-Kuang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 17 (04) : 763 - 771
  • [37] Ultrathin Body Effects in Multiple-Gate SOI Transistors
    Gamiz, F.
    Donetti, L.
    Sampedro, C.
    Godoy, A.
    Rodriguez, N.
    ULSI PROCESS INTEGRATION 6, 2009, 25 (07): : 91 - 98
  • [38] Dynamics of Single-Electron Capture in Si Nanowire MOSFETs
    Fujiwara, Akira
    Miyamoto, Satoru
    Nishiguchi, Katsuhiko
    Ono, Yukinori
    Zimmerman, N. M.
    2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 53 - +
  • [39] Achieving Single-Electron Sensitivity at Enhanced Speed in Fully Depleted CCDs with Double-Gate MOSFETs
    Sofo-Haro, Miguel
    Donlon, Kevan
    Estrada, Juan
    Holland, Steve
    Fahim, Farah
    Leitz, Chris
    PHYSICAL REVIEW LETTERS, 2024, 133 (12)
  • [40] Performance of single-electron transistor logic composed of multi-gate single-electron transistors
    Jeong, MY
    Jeong, YH
    Hwang, SW
    Kim, DM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6706 - 6710
12345