A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs

被引：0
|
作者：
Lee, Wei [1 ]
Su, Pin [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：25 / 26
页数：2
相关论文
共 50 条
  • [41] Performance of single-electron transistor logic composed of multi-gate single-electron transistors
    Pohang Univ of Science and, Technology, Kyungbuk, Korea, Republic of
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (6706-6710):
  • [42] Implementation of single-electron transistor with resistive gate
    Pashkin, Y
    Nakamura, Y
    Tsai, JS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 406 - 409
  • [43] Implementation of single-electron transistor with resistive gate
    Pashkin, Yuri
    Nakamura, Yasunobu
    Tsai, Jaw-Shen
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (1 B): : 406 - 409
  • [44] Ferromagnetic single-electron transistor with RC gate
    Shirakashi, J
    Takemura, Y
    MAGNETOELECTRONICS AND MAGNETIC MATERIALS-NOVEL PHENOMENA AND ADVANCED CHARACTERIZATION, 2003, 746 : 163 - 168
  • [45] A single-electron three-input AND gate
    Tsimperidis, I
    Karafyllidis, I
    Thanailakis, A
    MICROELECTRONICS JOURNAL, 2002, 33 (03) : 191 - 195
  • [46] Fin thickness asymmetry effects in multiple-gate SOIFETs (MuGFETs)
    Schulz, T
    Xiong, W
    Cleavelin, CR
    Schruefer, K
    Gostkowski, M
    Matthews, K
    Gebara, G
    Zaman, RJ
    Patruno, P
    Chaudhry, A
    Woo, A
    Colinge, JP
    2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2005, : 154 - 156
  • [47] Junctionless Multiple-Gate (JLMG) MOSFETs: A Unified Subthreshold Current Model to Assess Noise Margin of Subthreshold Logic Gate
    Chiang, Te-Kuang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (10) : 5330 - 5334
  • [48] Single-electron transistors based on gate-induced Si island for single-electron logic application
    Kim, DH
    Sung, SK
    Kim, KR
    Lee, JD
    Park, BG
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (04) : 170 - 175
  • [49] Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs
    Akhavan, Nima Dehdashti
    Afzalian, Aryan
    Lee, Chi-Woo
    Yan, Ran
    Ferain, Isabelle
    Razavi, Pedram
    Yu, Ran
    Fagas, Giorgos
    Colinge, Jean-Pierre
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 26 - 32
  • [50] Intra-Cell Process Variability and Compact Modeling of LWR Effects: from Self-Aligned Multiple Patterning to Multiple-Gate MOSFETs
    Chen, Yijian
    Kang, Weiling
    Cheng, Qi
    DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VI, 2012, 8327
12345