Doping fluctuation effects in multiple-gate SOI MOSFETs

被引：1
|
作者：
Colinge, C. A. [1 ]
Xiong, W. [2 ]
Cleavelin, C. R. [2 ]
Colinge, J. -P. [3 ]
机构：
[1] Texas Instruments Inc, SiTD, Dallas, TX 75265 USA
[2] Infineon Technolo, D-85579 Neubiberg, Germany
[3] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES | 2007年
关键词：
silicon-on-insulator; doping fluctuations; SOI MOSFET; multiple-gate; MOSFETs;
D O I：
10.1007/978-1-4020-6380-0_12
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Random doping fluctuation effects are studied in multiple-gate SOI MOSFETs (MuGFETs) using numerical simulation. The presence of a single doping impurity atom increases threshold voltage. Electrical parameters vary with the physical location of the impurity atom.
引用
收藏
页码：165 / +
页数：2
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