3-D effect of cell designs on the breakdown voltage of power SOI-LDMOS

被引：6
|
作者：
Suzuki, Y [1 ]
Kishida, T [1 ]
Takano, H [1 ]
Shirai, Y [1 ]
Suzumura, M [1 ]
机构：
[1] MATSUSHITA ELECT WORKS INC,CENT RES LAB,KADOMA,OSAKA 571,JAPAN
来源：
1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/SOI.1996.552530
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：134 / 135
页数：2
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