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- [43] Analysis of the back gate effect on the breakdown behaviour of SOI LDMOS transistors ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 253 - 256
- [46] Breakdown characteristics of SOI LDMOS high voltage devices with variable low k dielectric laye Pan Tao Ti Hsueh Pao, 2006, 5 (881-885):
- [50] Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect ENGINEERING RESEARCH EXPRESS, 2023, 5 (03):