Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

被引：0
|
作者：
Attilio Belmonte [1 ]
Gouri Sankar Kar [1 ]
机构：
[1] imec,
来源：
Nature Reviews Electrical Engineering | 2025年 / 2卷 / 4期
关键词：
D O I：
10.1038/s44287-025-00162-w
中图分类号：
学科分类号：
摘要：
Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges. A new DRAM bit cell without a capacitor and with two thin-film transistors — each with an oxide semiconductor channel such as indium-gallium-zinc-oxide — shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM.
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页码：220 / 221
页数：1
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