DESIGN AND FABRICATION OF A GaAs VERTICAL MESFET.

被引：0
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作者：
Frensley, William R. [1 ]
Bayraktaroglu, Burhan [1 ]
Campbell, Sarah E. [1 ]
Shih, Hung-Dah [1 ]
Lehmann, Randall E. [1 ]
机构：
[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA
来源：
| 1600年 / ED-32期
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摘要：
TRANSISTORS, FIELD EFFECT
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