DESIGN AND FABRICATION OF A GaAs VERTICAL MESFET.

被引：0

作者：

Frensley, William R. ^{[1
]}

Bayraktaroglu, Burhan ^{[1
]}

Campbell, Sarah E. ^{[1
]}

Shih, Hung-Dah ^{[1
]}

Lehmann, Randall E. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

| 1600年 / ED-32期

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摘要：

TRANSISTORS, FIELD EFFECT

引用

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[21] LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (03) : 217 - 227
[22] MESFET model for the design of GaAs digital integrated circuits
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[23] Fabrication of a GaAs MESFET using resistless processing and selective area epitaxy
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[24] TWO-STEP ANNEALING PROCESS FOR GaAs MESFET FABRICATION.
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[25] MESA RELEASE AND DEPOSITION USED FOR GAAS-ON-SI MESFET FABRICATION
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[26] GAAS-MESFET FABRICATION USING MASKLESS ION-IMPLANTATION
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[27] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE
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AKIYAMA, M
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[29] GaAs MESFET FEEDBACK AMPLIFIERS - DESIGN CONSIDERATIONS AND CHARACTERISTICS.
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[30] ON DESIGN AND PERFORMANCE OF LOSSY MATCH GAAS-MESFET AMPLIFIERS
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