DESIGN AND FABRICATION OF A GaAs VERTICAL MESFET.

被引：0

作者：

Frensley, William R. ^{[1
]}

Bayraktaroglu, Burhan ^{[1
]}

Campbell, Sarah E. ^{[1
]}

Shih, Hung-Dah ^{[1
]}

Lehmann, Randall E. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

| 1600年 / ED-32期

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摘要：

TRANSISTORS, FIELD EFFECT

引用

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