DESIGN AND FABRICATION OF A GaAs VERTICAL MESFET.

被引：0

作者：

Frensley, William R. ^{[1
]}

Bayraktaroglu, Burhan ^{[1
]}

Campbell, Sarah E. ^{[1
]}

Shih, Hung-Dah ^{[1
]}

Lehmann, Randall E. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

| 1600年 / ED-32期

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摘要：

TRANSISTORS, FIELD EFFECT

引用

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[1] DESIGN AND FABRICATION OF A GAAS VERTICAL MESFET
FRENSLEY, WR
BAYRAKTAROGLU, B
CAMPBELL, SE
SHIH, HD
LEHMANN, RE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 952 - 956
[2] ELECTRON RADIATION EFFECTS OF GaAs MESFET.
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1980, (23):
[4] VARIABLE PINCH-OFF GaAs MESFET.
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[9] HIGH TEMPERATURE GAP MESFET.
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[10] HALOGEN LAMP ANNEALING OF GAAS FOR MESFET FABRICATION
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