Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS

被引：0

作者：

Wang, Wei-Chun ^{[1
]}

Zhang, Shida ^{[1
]}

Sharma, Sudarshan ^{[1
]}

Lee, Minah ^{[1
]}

Mukhopadhyay, Saibal ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA

来源：

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年

关键词：

Aging; Hot Carrier Injection (HCI); Compute-In-Memory (CIM); Negative Bias Temperature Instability (NBTI);

D O I：

10.1109/IRPS48228.2024.10529313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper characterizes the aging effect in an 8T-SRAM-based Analog Computing-In-Memory (ACIM) circuit. The measurement results from a 28nm CMOS test chip show that Hot Carrier Injection (HCI) in the 2T path and Negative Bias Temperature Instability (NBTI) in the current mirrors increase computation errors in ACIM and reduce its power efficiency. In addition, a lower Hamming Weight (HW) of the columns and higher analog input lead to stronger aging degradation.

引用

页数：4

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