Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS

被引：0

作者：

Wang, Wei-Chun ^{[1
]}

Zhang, Shida ^{[1
]}

Sharma, Sudarshan ^{[1
]}

Lee, Minah ^{[1
]}

Mukhopadhyay, Saibal ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA

来源：

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年

关键词：

Aging; Hot Carrier Injection (HCI); Compute-In-Memory (CIM); Negative Bias Temperature Instability (NBTI);

D O I：

10.1109/IRPS48228.2024.10529313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper characterizes the aging effect in an 8T-SRAM-based Analog Computing-In-Memory (ACIM) circuit. The measurement results from a 28nm CMOS test chip show that Hot Carrier Injection (HCI) in the 2T path and Negative Bias Temperature Instability (NBTI) in the current mirrors increase computation errors in ACIM and reduce its power efficiency. In addition, a lower Hamming Weight (HW) of the columns and higher analog input lead to stronger aging degradation.

引用

页数：4

共 50 条

[41] A 28nm 157TOPS/W 446.9Kb/mm2 Compute-In-Memory SRAM Macro with Analog-Digital Hybrid Computing for Deep Neural Network Inference
Jeong, Sangsu
Oh, Juyoung
Jeon, Dongsuk
2024 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE, CICC, 2024,
[42] A Delta-Sigma-Based Computing-In-Memory Macro Targeting Edge Computation
Zhang, Ran
Un, Ka-Fai
Guo, Mingqiang
Qi, Liang
Xu, Dengke
Zhao, Weibing
Martins, R. P.
Maloberti, Franco
Sin, Sai-Weng
2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, 2024,
[43] Trends and challenges in the circuit and macro of RRAM-based computing-in-memory systems
Wei, Song -Tao
Gao, Bin
Wu, Dong
Tang, Jian-Shi
Qian, He
Wu, Hua-Qiang
CHIP, 2022, 1 (01):
[44] A 106TOPS/W SRAM COMPUTE-IN-MEMORY MACRO IN 28NM WITH RECONFIGURABLE BITWISE OPERATION FOR AI
Meng, Yiqi
Chen, Yekuan
Chen, Yiling
Sun, Guoquan
Ma, De
Zhu, Xiaolei
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
[45] A computing-in-memory macro based on three-dimensional resistive random-access memory
Huo, Qiang
Yang, Yiming
Wang, Yiming
Lei, Dengyun
Fu, Xiangqu
Ren, Qirui
Xu, Xiaoxin
Luo, Qing
Xing, Guozhong
Chen, Chengying
Si, Xin
Wu, Hao
Yuan, Yiyang
Li, Qiang
Li, Xiaoran
Wang, Xinghua
Chang, Meng-Fan
Zhang, Feng
Liu, Ming
NATURE ELECTRONICS, 2022, 5 (07) : 469 - 477
[46] A computing-in-memory macro based on three-dimensional resistive random-access memory
Qiang Huo
Yiming Yang
Yiming Wang
Dengyun Lei
Xiangqu Fu
Qirui Ren
Xiaoxin Xu
Qing Luo
Guozhong Xing
Chengying Chen
Xin Si
Hao Wu
Yiyang Yuan
Qiang Li
Xiaoran Li
Xinghua Wang
Meng-Fan Chang
Feng Zhang
Ming Liu
Nature Electronics, 2022, 5 : 469 - 477
[47] An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology
Lakeh, Mohammadreza Dolatpoor
Kammerer, Jean-Baptiste
Uhring, Wilfried
Schell, Jean-Baptiste
Calmon, Francis
2020 IEEE SENSORS, 2020,
[48] Retina Stimulator with Channel Dependent Arbitrary Waveforms in 28nm CMOS Process
Steinhoff, Raphel
Moll, Steffen
Kaltenstadler, Sebastian
Rothermel, Albrecht
2023 21ST IEEE INTERREGIONAL NEWCAS CONFERENCE, NEWCAS, 2023,
[49] Temperature Dependence of Diode and ggNMOS ESD Protection Structures in 28nm CMOS
Li, Cheng
Zhang, Feilong
Wang, Chenkun
ChenQi
Lu, Fei
Wang, Han
Di, Mengfu
Cheng, Yuhua
Zhao, Haijun
Wang, Albert
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 743 - 745
[50] A Rail-to-Rail-Input Chopper Instrumentation Amplifier in 28nm CMOS
Pipino, A.
Pezzotta, A.
Resta, F.
De Matteis, M.
Baschirotto, A.
2015 IEEE CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS), 2015, : 73 - 76

← 1 2 3 4 5 →