SOME PROPERTIES OF DIODE STRUCTURES MADE OF SEMIINSULATING GALLIUM ARSENIDE

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作者：
GONTAR, VM
EGIAZARY.GA
RUBIN, VS
MURYGIN, VI
STAFEEV, VI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 11期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1460 / &
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