SOME PROPERTIES OF DIODE STRUCTURES MADE OF SEMIINSULATING GALLIUM ARSENIDE

被引：0

作者：

GONTAR, VM

EGIAZARY.GA

RUBIN, VS

MURYGIN, VI

STAFEEV, VI

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 11期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1460 / &

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