1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS

被引:185
|
作者
NING, TH
COOK, PW
DENNARD, RH
OSBURN, CM
SCHUSTER, SE
YU, HN
机构
关键词
D O I
10.1109/T-ED.1979.19433
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:346 / 353
页数:8
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