1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS

被引：185

|

作者：

NING, TH

COOK, PW

DENNARD, RH

OSBURN, CM

SCHUSTER, SE

YU, HN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：346 / 353

页数：8

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