1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS

被引：185
|
作者：
NING, TH
COOK, PW
DENNARD, RH
OSBURN, CM
SCHUSTER, SE
YU, HN
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期
关键词：
D O I：
10.1109/T-ED.1979.19433
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：346 / 353
页数：8
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