VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION

被引：17
|
作者：
SAKAKIBARA, Y
OGAWA, T
KOMATSU, K
MORIYA, S
KOBAYASHI, M
KOBAYASHI, T
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期
关键词：
D O I：
10.1109/T-ED.1981.20600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1279 / 1284
页数：6
相关论文
共 50 条
  • [1] EFFECT OF BEAM CONDITION IN VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING FOR 0.25 MU-M AND BELOW
    HIRASAWA, S
    NAKAJIMA, K
    TAMURA, T
    AIZAKI, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2319 - 2322
  • [2] ELECTRON-BEAM DIRECT WRITING TECHNOLOGY APPLIED TO 512 KBIT ROM WITH 1-MU-M GEOMETRY
    SUZUKI, K
    MORIMOTO, M
    ENDO, N
    SUGIMOTO, M
    IIDA, Y
    KUROGI, Y
    MORI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1088 - 1094
  • [3] VARIABLE-SHAPED ELECTRON-BEAM LITHOGRAPHY
    COGSWELL, G
    MIYAUCHI, S
    TANAKA, K
    GOTO, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C152 - C152
  • [4] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION
    HIRATA, K
    OZAKI, Y
    ODA, M
    KIMIZUKA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1323 - 1331
  • [5] A 1-MU-M BIPOLAR VLSI TECHNOLOGY
    EVANS, SA
    MORRIS, SA
    ARLEDGE, LA
    ENGLADE, JO
    FULLER, CR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1373 - 1379
  • [6] STITCHING ACCURACY IN A VARIABLE-SHAPED ELECTRON-BEAM EXPOSURE SYSTEM
    TAKAMOTO, K
    MATSUDA, T
    OMATA, F
    OKUBO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 561 - 566
  • [7] SUB-0.2-MU-M LITHOGRAPHY BY USING A VARIABLE-SHAPED ELECTRON-BEAM ASSISTED BY A FOCUSED ION-BEAM PROCESS
    HOSONO, K
    MINAMI, H
    KUSUNOSE, H
    FUJINO, T
    NAGAHAMA, K
    MORIMOTO, H
    WATAKABE, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2044 - 2047
  • [8] 0.1-MUM FINE-PATTERN FABRICATION USING VARIABLE-SHAPED ELECTRON-BEAM LITHOGRAPHY
    HASHIMOTO, K
    YASUDA, M
    HIRAI, Y
    KAWAKITA, K
    NOMURA, N
    MURATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2281 - L2283
  • [9] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
  • [10] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290
12345