A 1-MU-M BIPOLAR VLSI TECHNOLOGY

被引：19
|
作者：
EVANS, SA
MORRIS, SA
ARLEDGE, LA
ENGLADE, JO
FULLER, CR
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期
关键词：
D O I：
10.1109/T-ED.1980.20042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1373 / 1379
页数：7
相关论文
共 50 条
  • [1] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION
    HIRATA, K
    OZAKI, Y
    ODA, M
    KIMIZUKA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1323 - 1331
  • [2] VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION
    SAKAKIBARA, Y
    OGAWA, T
    KOMATSU, K
    MORIYA, S
    KOBAYASHI, M
    KOBAYASHI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1279 - 1284
  • [3] OPTIMIZED RETROGRADE N-WELL FOR 1-MU-M CMOS TECHNOLOGY
    MARTIN, RA
    CHEN, JYT
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (02) : 286 - 292
  • [4] ON THE 1-MU-M SYSTEM OF IRON HYDRIDE
    BALFOUR, WJ
    LINDGREN, B
    OCONNOR, S
    CHEMICAL PHYSICS LETTERS, 1983, 96 (02) : 251 - 252
  • [5] OPTICAL LITHOGRAPHY IN THE 1-MU-M LIMIT
    DOANE, DA
    SOLID STATE TECHNOLOGY, 1980, 23 (08) : 101 - 114
  • [6] ELECTRON RESISTS FOR 1-MU-M MICROLITHOGRAPHY
    SUGAWARA, S
    KOGURE, O
    HARADA, K
    KAKUCHI, M
    SUKEGAWA, K
    IMAMURA, S
    MIYOSHI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C107 - C107
  • [7] MEASUREMENT OF 1-MU-M DIAM BEAMS
    CANNON, B
    GARDNER, TS
    COHEN, DK
    APPLIED OPTICS, 1986, 25 (17): : 2981 - 2983
  • [8] DEEP-IMPLANT 1-MU-M MOSFET STRUCTURE WITH IMPROVED THRESHOLD CONTROL FOR VLSI CIRCUITRY
    RISCH, L
    WERNER, C
    MULLER, W
    WIEDER, AW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 601 - 606
  • [9] PICOSECOND DAMAGE STUDIES AT 0.5-MU-M AND 1-MU-M
    SOILEAU, MJ
    WILLIAMS, WE
    VANSTRYLAND, EW
    BOGGESS, TF
    SMIRL, AL
    OPTICAL ENGINEERING, 1983, 22 (04) : 424 - 430
  • [10] 1 MU-M MOSFET VLSI TECHNOLOGY .1. OVERVIEW
    YU, HN
    REISMAN, A
    OSBURN, CM
    CRITCHLOW, DL
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 240 - 246
12345