1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY

被引：12

|

作者：

GROBMAN, WD

LUHN, HE

DONOHUE, TP

SPETH, AJ

WILSON, A

HATZAKIS, M

CHANG, THP

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期

关键词：

D O I：

10.1109/JSSC.1979.1051175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：282 / 290

页数：9

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