DESIGN AND FABRICATION OF INGAAS/INP AVALANCHE PHOTODIODES FOR THE 1 TO 1.6 MU-M WAVELENGTH REGION

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TROMMER, R

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FREQUENZ | 1984年 / 38卷 / 09期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：212 / 216

页数：5

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