NEW METHOD TO SUPPRESS ENCROACHMENT BY PLASMA-DEPOSITED BETA-PHASE TUNGSTEN NITRIDE THIN-FILMS

被引：26
|
作者：
KIM, YT
MIN, SK
机构：
[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 130-650, Cheongryang, Seoul
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期
关键词：
D O I：
10.1063/1.106304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten nitride thin films are prepared with the WF6-NH3-H2 system by the plasma-enhanced chemical vapor deposition method. X-ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3 ratio of 1 are beta-phase W2N. The resistivity of W2N is about 190-210-mu-OMEGA cm and it is demonstrated that severe encroachment and SiO2 etching during the low-pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.
引用
收藏
页码：929 / 931
页数：3
相关论文
共 50 条
  • [41] A NEW METHOD OF MEASURING INTERNAL-STRESS IN THIN-FILMS DEPOSITED ON SILICON BY RAMAN-SPECTROSCOPY
    IWAOKA, T
    YOKOYAMA, S
    OSAKA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01): : 112 - 113
  • [42] Fluorine-free Plasma Enhanced Atomic Layer Deposited Ultrathin Tungsten Nitride Thin Films for Dual Diffusion Barrier Performance
    Seo, Kang-Min
    Mohapatra, Debananda
    Bae, Gun-Woo
    Ansari, Mohd Zahid
    Son, Yeseul
    Jang, Yujin
    Bae, Jong-Seong
    Hong, Tae Eun
    Kim, Soo-Hyun
    ACS APPLIED NANO MATERIALS, 2023, 6 (23) : 21741 - 21751
  • [43] PREPARATION OF LOW-RESISTIVITY TUNGSTEN THIN-FILMS DEPOSITED BY MICROWAVE-PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM THE TUNGSTEN HEXAFLUORIDE HYDROGEN SYSTEM
    BELKACEM, A
    ARNAL, Y
    PELLETIER, J
    ANDRE, E
    OBERLIN, JC
    THIN SOLID FILMS, 1994, 241 (1-2) : 301 - 304
  • [44] NEW REACTOR FOR LARGE-AREA AMORPHOUS-SILICON THIN-FILMS BY SCANNING PLASMA METHOD
    FUJIYAMA, H
    MURATA, M
    KANEKO, S
    MORITA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C483 - C484
  • [45] SILICON-NITRIDE THIN-FILMS PREPARED BY THE ELECTRON-CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR-DEPOSITION METHOD
    MANABE, Y
    MITSUYU, T
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2475 - 2480
  • [46] Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method
    Noma, Masao
    Eriguchi, Koji
    Takao, Yoshinori
    Terayama, Nobuyuki
    Ono, Kouichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (03)
  • [47] Crystalline lattice phase-conversion on thin boron nitride films deposited on silicon wafers by an ion beam assisted deposition method
    Yokota, Katsuhiro
    Kimura, Hidekazu
    Miyashita, Fumiyoshi
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (459-462): : 459 - 462
  • [48] ORGANIC VAPOR-PHASE DEPOSITION - A NEW METHOD FOR THE GROWTH OF ORGANIC THIN-FILMS WITH LARGE OPTICAL NONLINEARITIES
    BURROWS, PE
    FORREST, SR
    SAPOCHAK, LS
    SCHWARTZ, J
    FENTER, P
    BUMA, T
    BAN, VS
    FORREST, JL
    JOURNAL OF CRYSTAL GROWTH, 1995, 156 (1-2) : 91 - 98
  • [49] Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing
    Martínez, F.L.
    Mártil, I.
    Gonzalez-Díaz, G.
    Bernal-Oliva, A.M.
    González-Leal, J.M.
    Marquez, E.
    Thin Solid Films, 1999, 343 : 433 - 436
  • [50] Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing
    Martínez, FL
    Mártil, I
    González-Díaz, G
    Bernal-Oliva, AM
    González-Leal, JM
    Márquez, E
    THIN SOLID FILMS, 1999, 343 : 433 - 436
12345