NEW METHOD TO SUPPRESS ENCROACHMENT BY PLASMA-DEPOSITED BETA-PHASE TUNGSTEN NITRIDE THIN-FILMS

被引：26
|
作者：
KIM, YT
MIN, SK
机构：
[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 130-650, Cheongryang, Seoul
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期
关键词：
D O I：
10.1063/1.106304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten nitride thin films are prepared with the WF6-NH3-H2 system by the plasma-enhanced chemical vapor deposition method. X-ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3 ratio of 1 are beta-phase W2N. The resistivity of W2N is about 190-210-mu-OMEGA cm and it is demonstrated that severe encroachment and SiO2 etching during the low-pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.
引用
收藏
页码：929 / 931
页数：3
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