NEW METHOD TO SUPPRESS ENCROACHMENT BY PLASMA-DEPOSITED BETA-PHASE TUNGSTEN NITRIDE THIN-FILMS

被引：26
|
作者：
KIM, YT
MIN, SK
机构：
[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 130-650, Cheongryang, Seoul
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期
关键词：
D O I：
10.1063/1.106304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten nitride thin films are prepared with the WF6-NH3-H2 system by the plasma-enhanced chemical vapor deposition method. X-ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3 ratio of 1 are beta-phase W2N. The resistivity of W2N is about 190-210-mu-OMEGA cm and it is demonstrated that severe encroachment and SiO2 etching during the low-pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.
引用
收藏
页码：929 / 931
页数：3
相关论文
共 50 条
  • [31] INSITU REAL-TIME ELLIPSOMETRIC STUDY OF THE GROWTH OF RF PLASMA-DEPOSITED AMORPHOUS HYDROGENATED SILICON OXYNITRIDE THIN-FILMS
    CAMPMANY, J
    CANILLAS, A
    ANDUJAR, JL
    COSTA, J
    BERTRAN, E
    THIN SOLID FILMS, 1993, 228 (1-2) : 137 - 140
  • [32] Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode
    Nandi, Dip K.
    Sen, Uttam K.
    Sinha, Soumyadeep
    Dhara, Arpan
    Mitra, Sagar
    Sarkar, Shaibal K.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (26) : 17445 - 17453
  • [33] COMPARISON OF LOW-PRESSURE AND PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED TUNGSTEN THIN-FILMS
    GREENE, WM
    OLDHAM, WG
    HESS, DW
    APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1133 - 1135
  • [34] PLASMA-DEPOSITED SILICON-NITRIDE FILMS WITH LOW HYDROGEN CONTENT FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS APPLICATION
    CAMPMANY, J
    ANDUJAR, JL
    CANILLAS, A
    CIFRE, J
    BERTRAN, E
    SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 : 333 - 336
  • [35] The wrinkling concept applied to plasma-deposited polymer-like thin films: A promising method for the fabrication of flexible electrodes
    Thiry, Damien
    Vinx, Nathan
    Damman, Pascal
    Aparicio, Francisco J.
    Tessier, Pierre-Yves
    Moerman, David
    Leclere, Philippe
    Godfroid, Thomas
    Deprez, Sylvain
    Snyders, Rony
    PLASMA PROCESSES AND POLYMERS, 2020, 17 (09)
  • [36] THE MECHANICAL-PROPERTIES AND MICROSTRUCTURE OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE THIN-FILMS
    TAYLOR, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04): : 2464 - 2468
  • [37] NEW METHOD FOR MEASURING REFRACTIVE-INDEX AND THICKNESS OF LIQUID AND DEPOSITED SOLID THIN-FILMS
    KERSTEN, RT
    OPTICS COMMUNICATIONS, 1975, 13 (03) : 327 - 329
  • [38] THE PREPARATION, PROPERTIES AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    GUPTA, M
    RATHI, VK
    THANGARAJ, R
    AGNIHOTRI, OP
    CHARI, KS
    THIN SOLID FILMS, 1991, 204 (01) : 77 - 106
  • [39] Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
    Martínez, FL
    Ruiz-Merino, R
    del Prado, A
    San Andrés, E
    Mártil, I
    González-Díaz, G
    Jeynes, C
    Barradas, NP
    Wang, L
    Reehal, HS
    THIN SOLID FILMS, 2004, 459 (1-2) : 203 - 207
  • [40] APPLICATION OF THE ERD METHOD FOR HYDROGEN DETERMINATION IN SILICON (OXY)NITRIDE THIN-FILMS PREPARED BY ECR PLASMA DEPOSITION
    HRUBCIN, L
    HURAN, J
    SANDRIK, R
    KOBZEV, AP
    SHIROKOV, DM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 60 - 62
12345