NEW METHOD TO SUPPRESS ENCROACHMENT BY PLASMA-DEPOSITED BETA-PHASE TUNGSTEN NITRIDE THIN-FILMS

被引：26
|
作者：
KIM, YT
MIN, SK
机构：
[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 130-650, Cheongryang, Seoul
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期
关键词：
D O I：
10.1063/1.106304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten nitride thin films are prepared with the WF6-NH3-H2 system by the plasma-enhanced chemical vapor deposition method. X-ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3 ratio of 1 are beta-phase W2N. The resistivity of W2N is about 190-210-mu-OMEGA cm and it is demonstrated that severe encroachment and SiO2 etching during the low-pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.
引用
收藏
页码：929 / 931
页数：3
相关论文
共 50 条
  • [21] VISIBLE-LIGHT EMISSION AT ROOM-TEMPERATURE FROM ANODIZED PLASMA-DEPOSITED SILICON THIN-FILMS
    BUSTARRET, E
    LIGEON, M
    BRUYERE, JC
    MULLER, F
    HERINO, R
    GASPARD, F
    ORTEGA, L
    STUTZMANN, M
    APPLIED PHYSICS LETTERS, 1992, 61 (13) : 1552 - 1554
  • [22] CHARACTERIZATION OF MIXED-PHASE BN THIN-FILMS DEPOSITED BY PLASMA CVD
    KARIM, MZ
    CAMERON, DC
    HASHMI, MSJ
    SURFACE & COATINGS TECHNOLOGY, 1993, 60 (1-3): : 502 - 505
  • [23] Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation
    Martyniuk, Mariusz
    Musca, Charles A.
    Dell, John M.
    Elliman, Robert G.
    Faraone, Lorenzo
    INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING, 2009, 3 (1-2) : 3 - 22
  • [24] Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application
    Campmany, J.
    Andujar, J.L.
    Canillas, A.
    Cifre, J.
    Bertran, E.
    Sensors and Actuators, A: Physical, 1993, 37-38 (02) : 333 - 336
  • [25] POTENTIOSTATIC TESTING OF PLASMA-DEPOSITED SILICON-NITRIDE THIN PROTECTIVE FILMS FOR BONDS, BONDWIRES AND BONDPADS IN MICROELECTRONIC ASSEMBLIES
    ULRICH, RK
    YI, DY
    BROWN, WD
    ANG, SS
    CORROSION SCIENCE, 1992, 33 (03) : 403 - 412
  • [26] ADHESION, FRICTION, AND WEAR OF PLASMA-DEPOSITED THIN SILICON-NITRIDE FILMS AT TEMPERATURES TO 700-DEGREES-C
    MIYOSHI, K
    POUCH, JJ
    ALTEROVITZ, SA
    PANTIC, DM
    JOHNSON, GA
    WEAR, 1989, 133 (01) : 107 - 123
  • [27] EFFECT OF SUBSTRATE-TEMPERATURE ON DEPOSITION RATE OF RF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    ANDUJAR, JL
    BERTRAN, E
    CANILLAS, A
    CAMPMANY, J
    MORENZA, JL
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) : 3757 - 3759
  • [28] EFFECTS OF RF POWER ON OPTICAL AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    ANDUJAR, JL
    KASANEVA, J
    SERRA, J
    CANILLAS, A
    ROCH, C
    MORENZA, JL
    BERTRAN, E
    SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 : 733 - 736
  • [29] SOME OPTICAL AND ELECTRICAL-PROPERTIES OF THIN-FILMS DEPOSITED BY THE PLASMA POLYMERIZATION METHOD
    JANCA, J
    SODOMKA, L
    KUCIRKOVA, A
    ACTA PHYSICA SLOVACA, 1982, 32 (06) : 321 - 326
  • [30] CRYSTAL ORIENTATION IN TITANIUM THIN-FILMS DEPOSITED BY THE SPUTTERING METHOD WITHOUT PLASMA DAMAGE
    NAOE, M
    ONO, S
    HIRATA, T
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 134 : 1292 - 1295
12345