INHOMOGENEOUS OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN CZOCHRALSKI SILICON

被引：8

|

作者：

INOUE, N

OOSAKA, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 11期

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D O I：

10.1143/JJAP.17.2051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2051 / 2052

页数：2

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