INHOMOGENEOUS OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN CZOCHRALSKI SILICON

被引：8
|
作者：
INOUE, N
OOSAKA, J
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 11期
关键词：
D O I：
10.1143/JJAP.17.2051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2051 / 2052
页数：2
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