共 50 条
- [1] NATURE OF STACKING-FAULT DEFECTS IN EPITAXIAL SILICON LAYERSJOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2940 - &DIONNE, G
- [2] STACKING-FAULT DEFECTS IN EPITAXIAL SILICON LAYERSJOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 441 - +BOOKER, GR
- [3] STRUCTURE OF STACKING-FAULT PYRAMIDS IN SILICON-ON-INSULATOR MATERIALJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (05): : 2341 - 2347TWIGG, ME
- [4] EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICONAPPLIED PHYSICS LETTERS, 1963, 3 (03) : 44 - 44WASHBURN, JTHOMAS, GQUEISSER, HJ
- [5] EFFECT OF GROWTH RATE ON STACKING-FAULT DENSITY IN EPITAXIAL SILICON LAYERSJOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 695 - &NOTIS, MRCONARD, GP
- [6] STACKING-FAULT NUCLEATION AND GROWTH IN CVD SILICON EPITAXIAL-FILMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C118 - C118PETROFF, PMSAVAGE, AKATZ, LE
- [7] DISLOCATION AND STACKING-FAULT INTERACTIONS IN SILICONJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) : 119 - 122SPARKS, DR
- [8] ELECTRONIC STACKING-FAULT STATES IN SILICONPHYSICAL REVIEW B, 1981, 23 (10) : 5384 - 5396MATTHEISS, LFPATEL, JR
- [9] ANISOTROPY OF STACKING-FAULT GROWTH IN SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C87 - C87JENKINS, MRAVI, KV
- [10] ELECTRONIC STACKING-FAULT STATES IN SILICONBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 288 - 288PATEL, JRMATTHEISS, LF