HIGH THROUGHPUT SUB-MICRON LITHOGRAPHY WITH ELECTRON-BEAM PROXIMITY PRINTING

被引：0

作者：

BOHLEN, H ^{[1
]}

BEHRINGER, U ^{[1
]}

KEYSER, J ^{[1
]}

NEHMIZ, P ^{[1
]}

ZAPKA, W ^{[1
]}

KULCKE, W ^{[1
]}

机构：

[1] IBM DEUTSCHLAND GMBH,GERMAN MFG TECHNOL CTR,MFG INSTRUMENTS GRP,SINDELFINGEN,FED REP GER

来源：

SOLID STATE TECHNOLOGY | 1984年 / 27卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：210 / 217

页数：8

共 50 条

[21] USE OF SUB-MICRON ELECTRON-BEAM LITHOGRAPHY FOR FABRICATING 4K CCD MEMORY ARRAYS
HENDERSON, RC
REINER, T
COPPEN, PJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 973 - 973
[22] Fabrication of sub-micron sized structures on hybrid sol-gel glass with electron-beam lithography
Jiang, HJ
Yuan, XC
Cheong, WC
DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, 2001, 4594 : 104 - 109
[23] SUB-MICRON LITHOGRAPHY
BLAIS, PD
OPTICAL ENGINEERING, 1983, 22 (02) : 175 - 175
[24] PROCESS HURDLES IN ELECTRON-BEAM EXPOSURE OF SUB-MICRON PATTERNS.
Greeneich, J.S.
Semiconductor International, 1981, 4 (04) : 159 - 174
[25] THE ROLE OF FIELD-EMISSION IN SUB-MICRON ELECTRON-BEAM TESTING
SWANSON, LW
TUGGLE, D
LI, JZ
THIN SOLID FILMS, 1983, 106 (04) : 241 - 255
[26] SENSITIZATION OF OPTICAL PHOTORESISTS FOR ELECTRON-BEAM EXPOSURE OF SUB-MICRON PATTERNS
GONCHER, GM
LYNGDAL, JW
LAMER, GL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 384 - 388
[27] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[28] ELECTRON OPTICS FOR HIGH THROUGHPUT ELECTRON-BEAM LITHOGRAPHY SYSTEM
SOHDA, Y
NAKAYAMA, Y
SAITOU, N
ITOH, H
TODOKORO, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 2940 - 2943
[29] HIGH THROUGHPUT VARIABLE SHAPED ELECTRON-BEAM LITHOGRAPHY
PIWCZYK, BP
WILLIAMS, AE
SOLID STATE TECHNOLOGY, 1983, 26 (09) : 145 - 152
[30] DEVELOPMENT OF HIGH CONTRAST SILOXANE ELECTRON-BEAM RESIST AND APPLICATION FOR SUB-MICRON PATTERN TRANSFER
SUGITO, S
ISHIDA, S
IIDA, Y
NEC RESEARCH & DEVELOPMENT, 1989, (92): : 18 - 24

← 1 2 3 4 5 →