HIGH THROUGHPUT SUB-MICRON LITHOGRAPHY WITH ELECTRON-BEAM PROXIMITY PRINTING

被引：0

|

作者：

BOHLEN, H ^{[1
]}

BEHRINGER, U ^{[1
]}

KEYSER, J ^{[1
]}

NEHMIZ, P ^{[1
]}

ZAPKA, W ^{[1
]}

KULCKE, W ^{[1
]}

机构：

[1] IBM DEUTSCHLAND GMBH,GERMAN MFG TECHNOL CTR,MFG INSTRUMENTS GRP,SINDELFINGEN,FED REP GER

来源：

SOLID STATE TECHNOLOGY | 1984年 / 27卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：210 / 217

页数：8

相关论文

共 50 条

[41] PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
MACHIDA, Y
NAKAYAMA, N
HISATSUGU, T
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1980, 16 (03): : 99 - 113
[42] PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
OWEN, G
OPTICAL ENGINEERING, 1993, 32 (10) : 2446 - 2451
[43] EL SYSTEMS - HIGH THROUGHPUT ELECTRON-BEAM LITHOGRAPHY TOOLS
MOORE, RD
SOLID STATE TECHNOLOGY, 1983, 26 (09) : 127 - 132
[44] PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
WITTELS, ND
YOUNGMAN, CI
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C158 - C158
[45] PROXIMITY EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C157 - C157
[46] PROXIMITY FUNCTION APPROXIMATIONS FOR ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
KYSER, DF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C157 - C157
[47] PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
KATO, T
WATAKABE, Y
NAKATA, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1279 - 1285
[48] A FOCUSED ION-BEAM SYSTEM FOR SUB-MICRON LITHOGRAPHY
KURIHARA, K
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 41 - 44
[49] ADVANCES IN HIGH-RESOLUTION AND HIGH THROUGHPUT IN ELECTRON-BEAM LITHOGRAPHY
AHMED, H
VACUUM, 1987, 37 (3-4) : 375 - 375
[50] HIGH-THROUGHPUT, HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY
PFEIFFER, HC
GROVES, TR
NEWMAN, TH
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (04) : 494 - 501

← 1 2 3 4 5 →