A 20 NS 64K (4KX16) NMOS RAM

被引：3
|
作者：
SCHUSTER, SE
CHAPPELL, B
DILONARDO, V
BRITTON, PE
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 05期
关键词：
D O I：
10.1109/JSSC.1984.1052190
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：564 / 572
页数：9
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